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| SRFET AON6712 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AON6712 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AON6712 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 6.5m (VGS = 4.5V) Top View Fits SOIC8 footprint ! S S S G D D D D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B,J Current TC=25C TC=100C ID IDM IDSM IAR C Maximum 30 12 30 30 80 16 13 42 264 62.5 25 2.5 1.6 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain TA=25C H Current TA=70C C Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation B A A mJ W W C EAR PD PDSM TJ, TSTG TC=25C TC=100C TA=25C TA=70C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t 10s Steady-State Steady-State RJA RJC Typ 14.2 42 1.2 Max 20 50 2.0 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250uA, V GS=0V VDS=30V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1.4 80 4.3 6.8 5.2 100 0.35 0.5 5 3940 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 255 0.72 72.8 VGS=10V, V DS=15V, ID=20A 35.0 10.4 12.4 9.8 VGS=10V, V DS=15V, R L=0.83, RGEN=3 IF=20A, dI/dt=300A/s IF=20A, dI/dt=300A/s 8.4 45 10 36 32 43 1.1 95 5120 5.5 9.0 6.5 1.7 Min 30 0.1 10 0.1 2.3 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device in a still air environment with TA =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The SOA A curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire. Rev0: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 Vgs=10V1 25 20 ID (A) 40 ID(A) Vgs=3V 15 10 20 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 8 Normalized On-Resistance 1.8 ID=20A 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 25 50 75 100 125 150 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V VGS=4.5V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 25C 125C VDS=5V 60 7 RDS(ON) (m) VGS=4.5V 5 4 VGS=10V 2 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 12 RDS(ON) (m) 10 8 6 4 2 2 4 6 8 10 125C ID=20A 1.0E+02 1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=15V ID=18A 6000 5000 Capacitance (pF) 4000 3000 2000 1000 0 0 20 40 60 80 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS (Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss 8 VGS (Volts) 6 4 2 0 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 RDS(ON) limited 10s 10ms DC 1ms 200 160 Power (W) 120 80 40 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) 10s 100s TJ(Max)=150C TA=25C TJ(Max)=150C TC=25C Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6712 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 ID(A), Peak Avalanche Current 120 100 80 60 40 20 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C 75 Power Dissipation (W) tA = L ID BV - VDD 60 45 30 15 0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B) 40 35 Current rating ID(A) 30 Power (W) 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) TJ(Max)=150C TA=25C 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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